発表題目 Electronic properties of the residual donor in unintentionally doped beta-Ga2O3
 概要 Electron paramagnetic resonance (EPR) was used to study the donor that is responsible for the n-type conductivity in unintentionally doped (UID) beta-Ga2O3 substrates. We show that in as-grown material, the donor requires high temperature annealing to be activated. In partly activated material with the donor concentration in the e16 cm-3 range or lower, the donor is found to behave as a negative-U center (often called a DX center) with the negative charge state DX-lying ~16-20 meV below the neutral charge state d0 (or Ed), which is estimated to be ~28-29 meV below the conduction band minimum. This corresponds to a donor activation energy of Ea ~44-49 meV. In fully activated material with the donor spin density close to ~1e18 cm-3, donor electrons become delocalized, leading to the formation of impurity bands, which reduces the donor activation energy to Ea ~15-17 meV. The results clarify the electronic structure of the dominant donor in UID beta-Ga2O3.  
 発表/発行日 2016/12/16   2016年 Vol.:120 
 発表/発行機関 Journal of Applied Physics
 研究テーマ 生物・物性
 発表者
(NICT研究者のみを現在の所属で表示しています)
N.T. Son
後藤 健
野村 一城
Q. T. Thieu
富樫 理恵
村上 尚
熊谷 義直
倉又 朗人
東脇 正高
 【グリーンICTデバイス先端開発センター】
纐纈 明伯
山腰 茂伸
B. Monemar
E. Janz?n
 発表区分 研究論文

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